Abdul Rahim Haddad, Khaled El Fakih

كلية الهندسة-الجامعة الأمريكية - الشارقة · الامارات

Derivation of input sequences for distinguishing states of a finite state machine (FSM) specification is well studied in the context of FSM-based functional testing. We present three heuristics for the derivation of distinguishing sequences for nondeterministic FSM specifications. The first is based on a cost function that guides the derivation process, and the second is a genetic algorithm that evolves a population of individuals of possible solutions (or input sequences) using a fitness function and a crossover operator specifically tailored for the considered problem. The third heuristic is a mutation based algorithm that considers a candidate distinguishing sequence, and if the candidate is not a distinguishing sequence, then the algorithm tries to find a solution by appropriately mutating the candidate. Experiments are conducted to assess the performance of the proposed heuristics in addition to an existing algorithm, called exact algorithm, that derives distinguishing sequences of optimal length. Performance is assessed with respect to execution time, virtual memory consumption, and quality (length) of obtained sequences. Experiments are conducted using randomly generated machines with various numbers of states, inputs, outputs, and degrees of nondeterminism. Further, we assess the impact of varying the number of states, inputs, outputs, and degree of nondeterminism. Finally, in addition to the three proposed heuristics, we present a parallel multithreaded implementation of the exact algorithm using Open Multi-Processing. Experiments are conducted to assess the performance of the parallel implementation as compared to the sequential using both execution time speedup and efficiency.

Baker Mohammad , Maguy Abi Jaoude, Khaled Humood

جامعة خليفة · الامارات

The Memristor – memory resistor (MR)- is a non-linear passive two-terminal element that can be programmed to a certain resistance between two boundary levels: the Low Resistance State (LRS) and High Resistance State (HRS). The MR is a promising candidate to play a great role in the field of electronic technology owing to its high integration density, low power consumption, and relatively fast read/write times. Moreover, the ability of non-volatile MRs to retain their resistance state makes them suitable in Resistive Random-Access Memory, programmable logic and In-Memory Computing (IMC) applications. Additionally, MR devices response to environment can be utilized for sensing application. Despite the great advantages of MRs devices and their future potential there are still some challenges that stand between their design, fabrication, reliably, and their practical implementation. MRs devices have different physical structures and fabricated using different techniques and methods resulting in different characteristics and performance that are difficult to compare. Additionally, developing a general model that reliably describes the I-V behavior of various MR devices is one of the most challenging problems in MR technology. Moreover, one of the most challenging problems in crossbar resistive RAM (ReRAM) memories that limit their scalability and efficiency is the sneak path current. Finally, the exploration of the memristor element in applications beyond computing and in-memory like sensing and security has become an attractive changeling topic among researchers. This thesis encompasses five major parts containing original contributions. Part I Electrical Characterization, Part II Modeling and Simulation, Part III High Density ReRAM Crossbar with Selector Device for Sneak Path Reduction, Part IV Hybrid Memristor-CMOS Based Flash Analog to Digital Converter and Part V Memristor In Radiation Sensing. Part I contains Electrical Characterization and parameter extraction for various Memristor-based devices using cutting edge testing techniques and procedures. Part II describes various mathematical models in the literature that are used to model the Memristor behavior. Additionally, extracted parameter from fabricated Memristor has been used to tune and fit the mathematical and spice model for our group MR devices. Part III presents a novel fabricated memristor devices to synthesize a one selector one memristor (1S1R) configuration used in ReRAM crossbar. The proposed design aims to reduce the sneak path current in crossbar architecture which limits the array size, power, and noise margin in Resistive memories. The proposed configuration increases the crossbar read margin and device selectivity, as well as it enables high memory array density compared to the state-of-the art solutions. Part IV presents a novel hybrid Memristor-CMOS based flash Analog to Digital Converter (ADC). The proposed design solves the issue of resistor mismatching and its effect in the flash ADC encoding error using post-fabrication tuning property of MR technology. Part V report on novel approaches to utilize the electrical characteristics of the fabricated memristive devices for radiation sensing. This part reports the impacts of radiation on the electrical characteristics of fabricated memristors.

Fatih Bourekba, Noura Nait Bouda

كلية الفيزياء-جامعة العلوم والتكنولوجيا هواري بومدين - الجزائر · الجزائر

Ahmed El Amine Youmbai, M.Taha Youmbai, Maroua Medaci

كلية العلوم الدقيقة-جامعة الشهيد حمة لخضر - الوادي · الجزائر

Dans ce mémoire, nous avons traité deux types d’équations Diophantiennes à savoir les courbes elliptiques et certains ensembles dénommés les m-uplets Diophantiennes. Il s’agit de chercher des ensembles à m entiers (ou rationnels) positifs {𝑎1,𝑎2, ...,𝑎𝑚}, vérifiant la condition pour 1≤ 𝑎𝑖< 𝑎𝑗≤m: 𝑎𝑖𝑎𝑗+1 est un carré parfait. Dans certains cas, nous rame nous ce problème à la recherche de certains points dans des courbes elliptiques induites pas ces ensembles.

آسية شنه, زكية مقري

كلية العلوم الاقتصادية والتجارية وعلوم التسيير-جامعة باتنة 1 - الحاج لخضر · الجزائر

Muhammad A Al Saleh, خواجه وهاب احمد

كلية الهندسة-جامعة الملك فهد للبترول والمعادن · السعودية

Name Khaja Wahab AhmedThesis TitleHDS of Benzothiophene and Dibenzothiophenes over Phosphorus modified CoMo/Al2O3DegreeMasters of ScienceMajor FieldChemical EngineeringDate of DegreeApril 2011Deep desulfurization of middle distillate involves the removal of residual sulfur compounds such as alkyl substituted benzothiophenes, dibenzothiophenes. There is a renewed interest in study of hydrodesulphurization of these refractory sulfur compounds due to the requirement to use new feed stocks and the application of more severe environmental legislations. Therefore there is a need to study HDS of these refractory compounds to achieve very low sulfur levels. In this study reactivities, reaction pathways and reaction kinetics of benzothiophene and hindered dibenzothiophenes were studied. The focus was on 4,6-DMDBT and 4-MDBT which are considered as most refractory sulfur compounds to be desulfurized. CoMo/Al2O3 and Phosphorus modified CoMo/Al2O3 were synthesized by wet impregnation method. Catalysts were characterized by BET surface area and pore volume and by X-ray Diffraction. Reaction studies were carried out in a batch autoclave reactor system. CoMo/Al2O3 catalysts were prepared to achieve selective HDS properties and to enhance the favorable reaction pathway. The phosphorus modified CoMo/Al2O3 shows higher conversion as compared to unmodified catalysts. The reaction pathway study showed that the simultaneous Hydrodesulfurization (HDS) of DBT in a simultaneous reaction were influenced due to the presence of 4-MDBT and 4,6-DMDBT, the conversion of DBT was higher for the latter case. Simultaneous HDS of DBT also influenced the Direct desulfurization/Hydrogenation (DDS/HYD) ratio which was higher when DBT was desulfurized with 4,6-DMDBT.

عجرود صباح, ويدير ليلى

كلية العلوم الإجتماعية والإنسانية-جامعة العربي بن مهيدي - أم البواقي · الجزائر

هدفت هذه الدراسة الى معرفة هل يؤدي نمط التسيري الى الاحتراق النفسي لدى عمال المنجم وذلك بمنجم الحديد و الصلب (ارسلوميتال) بالونزة وللتحقيق من صحة الفرضية العامة والفرضيات الجزئية قمت بوضع فرضيتين جزئيتين وتتضمن الفرضية الاولى:أنه لاتوجد فروق دات دلالة احصائية بين درجات الاحتراق النفسى والاقدمية لدى عمال المنجم.أما الفرضية الجزئية الثانية:فعنونت تحت عنوان تختلف درجات الاحتراق النفسى لدى عمال المنجم حسب المستوى التعليمي.واعتمدت على المنهج الوصفي التحليلي لدراسة الواقع دراسة جيدة.بينما اعتمدت على عينة مكونة من90 فرد والتي مثلت المجتمع الاصلي وكان اختيارها بطريقة عشوائية،وايضا اعتمدت على عدة وسائل لجمع البيانات وهي كالتالي:المقابلة النصف موجهة قي الدراسة الاستطلاعية،أما في الجانب التطبيقي تم اعتماد مقياس لقياس الاحتراق النفسي والذي اعتمدته العالمة ماسلاش،وقمت بحساب ثباته وصدقه بتطبيق معادلة لوشي ومعادلة ألفا كرونباخ للثبات،أما بالنسبة للاستبيان فقد تم تصميمه من طرفي وتمت المصادقة عليه من طرف مجموعة من الاساتذة، بالاضافة الى الصدق التميزي الذي تم تطبيقه للحقق من صدقه وثباته بمعادلة كيودر وريدشادسون.ولتحليل الفرضية الاولى اعتمدت على قانون(ت للفروق أما بالنسبة للفرضية الثانية اعتمدت على طريقة النسب المئوية لمعرفة الاختلاف في درجات الاحتراق والمستوى التعليمي. وبالتالي فان الفرضيات الجزئية والفرضية العامة تحققوا

أرزقي زوبير, حياة جمعة, زهية بن تشقال

كلية الحقوق والعلوم السياسية-جامعة مولود معمري - تيزي وزو · الجزائر

Abdelouahab Bouchareb , Feriel Boulbene-Mouadji Ines

كلية علوم الارض والتطوير الإقليمي-جامعة الاخوة منتورى - قسنطينة 1 · الجزائر

أحلام مداس, عبدالحميد عباسي

كلية الاداب واللغات-جامعة محمد خيضر - بسكرة · الجزائر