Effect of Adding Selected Impurities the Optical and Electrical Properties of Silicon

الموضوعات

علوم تطبيقية وتكنولوجية

الملخص

The Impurities are used to improve optical and electrical properties for semiconductor, in this piece of study impurities are used to improve the optical and electrical properties of a silicon semiconductor. The aim of this study effect of adding impurities to improve the optical and electrical properties of silicon. For this reason three different samples are prepared from silicon doped with different types of impurities having the different concentration. One sample is doped with iodine pointedly (1.03%), another one is doped with Coumarin 500 pointedly (1.05%) and the third one is doped with Rohdamin B pointedly (1.07%). Spectrometer is used to measure absorption, absorption coefficient, extintion coefficient, and energy gap each of the above three mentioned samples. The results showed that for absorption the maximum is absorbed in the case of iodine sample and the minimum is in the case of the Coumarin 500 while the absorption of the Rohdamin B is found to lie in between that of these two samples. For the absorption coefficient the results showed that the maximum is in the case of the Rohdamin B sample and the minimum is for the Coumarin 500 sample while the coefficient of absorption for the iodine sample is found to lie in between that of these two samples. As for the excitation coefficient it is found that the maximum occurred in the case of the Rohdamin B sample and the minimum is in the case of the Coumarin 500 sample while that for the iodine sample is found to lie in between that of the above two cases. Finally the results of measurements of the energy gap are found to be 2.11 ev for the Coumarin 500 sample, 2.08 ev for the iodine sample, 2.03 ev for the Rohdamin B sample. The outcome of the results found in this piece of study indicate that the energy gap and the absorption increase of the three doped samples. However, the absorption coefficient and excitation coefficient are found to depend on the type of the impurity used. Here they are found to increase in the case of the iodine and Rohdamin B impurities and to decrease in the case of Coumarin 500. This study recommends to use same types of impurities added to anther semiconductor like germanium having the same concentration used have so as to see whether the results obtained here constitute a general rule or they just a special singular case.

روابط وملفات

التعريف والنوع

رقم الوثيقة

01a6f9eb-0924-4d05-ad94-11ebd9679386

رقم العقد

0

نوع الوسائط

Crawler

نوع المحتوى

الرسائل العلمية

صيغة المصدر

رسائل ماجيستير

نوع الملف

pdf text

أسماء الملفات

72744_1.pdf

بيانات النشر

ألقاب المؤلفين

[{"name_ar":"Hasaballrasoul Gesmallh Ismail","title_ar":"اشراف","title_en":"Supervision"},{"name_ar":"Mubarak Dirar Abdullah Yagoup","title_ar":"اشراف","title_en":"Supervision"},{"name_ar":"محمد عثمان أحمد إبراهيم ","title_ar":"اعداد","title_en":"Preparation"}]

اللغة

English

المصدر والدورية

اسم المصدر

Effect of Adding Selected Impurities the Optical and Electrical Properties of Silicon

المحتوى والصفحات

عدد الصفحات

0

إشراف وإعداد

الإشراف

Hasaballrasoul Gesmallh Ismail, Mubarak Dirar Abdullah Yagoup

الإعداد

محمد عثمان أحمد إبراهيم

الاقتباسات الببليوغرافية