تحضير Al2 O3 المطعم بعنصر السيريوم والمستخدم في الذواكر الالكترونية ودراسة خصائصه الالكترونية

الموضوعات

علوم بحتة وطبيعية

روابط وملفات

التعريف والنوع

رقم الوثيقة

fc593d1d-dc53-4324-ab69-b8a856e16b34

رقم العقد

0

نوع الوسائط

Crawler

نوع المحتوى

الرسائل العلمية

صيغة المصدر

رسائل ماجيستير

نوع الملف

pdf text

أسماء الملفات

1965084_1.pdf

بيانات النشر

ترجمة العنوان

Preparing Al2O3 Doped Ce Used in Nonvolatile Memories and Studying its Electronic Properties

ألقاب المؤلفين

[{"name_ar":"غسان ناشد","title_ar":"اشراف","title_en":"Supervision"},{"name_ar":"فاطمة صباغ","title_ar":"اعداد","title_en":"Preparation"}]

اللغة

Arabic

المصدر والدورية

اسم المصدر

تحضير Al2 O3 المطعم بعنصر السيريوم والمستخدم في الذواكر الالكترونية ودراسة خصائصه الالكترونية

المحتوى والصفحات

عدد الصفحات

0

ترجمة الملخص

Aluminum oxide doped with Cerium oxide at molar ratio of 2%, 4%, and 6% were synthesized by chemical way starting from Cerium and aluminum salts. The samples were pressed as disk shapes and named as (X2, X4, X6). Then they were sintered at 12000Cfor 48 h. the structure samples was studied using X-ray diffraction spectroscopy (XRD). Using AC technique, the electrical conductivity σ were studied as a function of log f in the range of (20 Hz-3 MHz). ln σ were studied as a function of 1/T and activation energy was calculated at different frequencies. The electrical conductivity σ and relaxation time τ were also studied as a function of temperature at different frequencies (1.1, 1.8875, 2.15, 2.6375, 2.925 MHz). the electrical resistance Rp were studied as a function of frequency in the range of (20 Hz-3 MHz). C-V characteristic was studied at 1 KHz frequency. (C-V) characterization shows hysteresis in (C-V) curve for samples which it have possibility to use it as floating gate in nonvolatile memories. Using Gain phase analyzer device, X(w) was studied in terms of R(W) in frequency range of (1Hz-20 KHz). In addition, the activation energy and majority charge carrier were calculated. Using DC current technique, lnσ variations was studied in a function of 1/T by which the Potential barriers of the samples were calculated. I-V characteristic was measured for tow sintering-temperature-processed samples 12000C and 11000C.this characterization shows it have possibility this materials to use in nonvolatile memories

إشراف وإعداد

الإشراف

غسان ناشد

الإعداد

فاطمة صباغ

الاقتباسات الببليوغرافية