Simulation bidimensionnelle de l’effet des pièges profonds dans le substrat sur les caractéristiques des Transistors à Effet de Champ en Arséniure de Gallium (GaAs FETs)

الموضوعات

علوم بحتة وطبيعية

الملخص

In this thesis, the reduction of the conductance of GaAs FETs by a negative voltage applied to thesubstrate, termed backgating or sidegating, was numerically modeled to determine which type oftraps is responsible of this phenomenon. Drift diffusion Modelling was carried out for several setsof deep levels in the substrate. It has been observed that deep acceptors are mainly responsible forbackgating, independently of the shallow level type in the substrate. In this case, there is nothreshold. However, when deep donors are present in the substrate, backgating is again reducedbut with a threshold. The presence of a buffer layer between the channel and the semi-insulatingsubstrate also helps reducing backgating.A two dimensional-hydrodynamic model was carried out to predict the performance of short-gatelength power III–V field effect transistors. The model is based on the conservation equations,deduced from the Boltzmann transport equation and solved in their whole form. This model isalso well suited to study the effect of substrate deep levels on the device. The results ofhydrodynamic model (physical model) were compared to those of the fully distributed model(electrical model), especially, as for high frequency operating. In fact, at high frequencies, thedimensions of the electrodes of microwave transistors such as FETs become comparable to thewavelength, highlighting the parasitic effect of wave propagation. Thus, this effect needs to beaccurately evaluated in the device model to assure a reliable design....

روابط وملفات

التعريف والنوع

رقم الوثيقة

eba12776-2ca5-4d8b-9352-62b80932ed67

رقم العقد

0

نوع الوسائط

Crawler

نوع المحتوى

الرسائل العلمية

صيغة المصدر

رسائل دكتوراة

نوع الملف

pdf text

أسماء الملفات

294911_1.pdf

بيانات النشر

ألقاب المؤلفين

[{"name_ar":"Nora Amel Abdeslam ","title_ar":"اعداد","title_en":"Preparation"},{"name_ar":"Nouredine Sengouga ","title_ar":"اشراف","title_en":"Supervision"}]

اللغة

French

المصدر والدورية

اسم المصدر

Simulation bidimensionnelle de l’effet des pièges profonds dans le substrat sur les caractéristiques des Transistors à Effet de Champ en Arséniure de Gallium (GaAs FETs)

المحتوى والصفحات

عدد الصفحات

0

إشراف وإعداد

الإشراف

Nouredine Sengouga

الإعداد

Nora Amel Abdeslam

الاقتباسات الببليوغرافية