Etude et Simulation d’une Photodiode a bas de GaN

الموضوعات

علوم تطبيقية وتكنولوجية

الملخص

Durant cette dernière décennie, les nitrures d’éléments III tels que le GaN, l’InN, l’AlN et le BN, sont en train de connaître un essor considérable. L’intérêt est croissant pour la construction des dispositifs électroniques à semi-conducteur pour les applications dans les domaines de la micro, de la nano et de l’optoélectronique. Ce travail se rapporte à l’étude des structures des photodiodes PIN à base de nitrures de gallium, la structure Au/Ni/AlGaN/GaN. Ce travail est une simulation basée sur le logiciel SILVACO Atlas pour obtenir les caractéristiques électriques et optiques de la jonction de la photodiode, à savoir la caractéristique courant-tension (I-V). During the last decade, nitrides of group III elements such as GaN, InN, AlN and BN, have been experiencing a considerable boom. There is a growing interest in the construction of semiconductor electronic devices for applications in the fields of micro, nano and optoelectronics. This work relates to the study of the structures of PIN photodiodes based on gallium nitrides, specifically the Au/Ni/AlGaN/GaN structure. This work is a simulation based on the SILVACO Atlas software to obtain the electrical and optical characteristics of the photodiode junction, namely the current-voltage (I-V) characteristic.

روابط وملفات

التعريف والنوع

رقم الوثيقة

1019113b-78ec-4ed3-b042-f6dc2904cbba

رقم العقد

0

نوع الوسائط

Crawler

نوع المحتوى

الرسائل العلمية

صيغة المصدر

ماستر (LMD)

نوع الملف

pdf text

أسماء الملفات

1048735_1.pdf

بيانات النشر

ألقاب المؤلفين

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اللغة

French

المصدر والدورية

اسم المصدر

Etude et Simulation d’une Photodiode a bas de GaN

المحتوى والصفحات

عدد الصفحات

0

ترجمة الملخص

During the last decade, nitrides of group III elements such as GaN, InN, AlN and BN, have been experiencing a considerable boom. There is a growing interest in the construction of semiconductor electronic devices for applications in the fields of micro, nano and optoelectronics. This work relates to the study of the structures of PIN photodiodes based on gallium nitrides, specifically the Au/Ni/AlGaN/GaN structure. This work is a simulation based on the SILVACO Atlas software to obtain the electrical and optical characteristics of the photodiode junction, namely the current-voltage (I-V) characteristic.

كلمات الباحثين

Semi-conducteurs; GaN; Photodiode PIN; SILVACO; AlGaN

إشراف وإعداد

الإشراف

Ali Chemsa, Ali Sadoun

الإعداد

Chaima Guitoubi, Chaouki Guemaz, karim Benamara, Saida Aboubaker

الاقتباسات الببليوغرافية