Performance of Semiconductor Diodes Fabricated from Silicon and Carbon doped with Magnesium, Aluminium, Sulphur, Copper, Zinc and Cadmium

الموضوعات

علوم تطبيقية وتكنولوجية

الملخص

The energy problem is one of the most long standing problems facing mankind. Different attempts were made to solve this problem, such as using solar cells which are considered as one of the most promising renewable energy sources. The available types of solar cells suffer from their low efficiencies and their high costs. The aim of this research is to study the performance of fabricated solar cells. By using chemical methods silicon was doped with Mg, Al, S, Cu, Zn and Cd. The current-voltage characteristics of the resulting fabricated p-n junction solar cells were studied. Also, the optical properties were studied - using ultraviolet spectrophotometer. The results found showed that for doping silicon with Al, S and Cu having atomic numbers 13, 16 and 29 the efficiency values were found to be 0.0650, 0.0560 and 0.0090, respectively. The decrease of efficiency, here, with the increase of the atomic number may be related to the fact that the increase of atomic number increases the nuclear attraction to electrons thus decreasing their velocity and chance to scape which decreases the current and thus decreases efficiency. For Cu, Zn and Cd, with atomic numbers 29, 30 and 48 the efficiency increases and takes the values. 0.0090, 0.0280 and 0.0651, respectively. In this case atoms may act as electric dipoles that may increase the internal deflection layer potential which increases the generation rate. When the host material is changed from silicon to carbon the efficiency decreases with increasing atomic number for Al, S, Zn, and Cd which have atomic numbers 13, 16, 30, and 48 respectively. The efficiency decreases and takes the values 0.440, 0.375, 0.020 and 0.019. For Mg, Al and Cu which have atomic numbers 12, 13 and 29, respectively, the efficiency increases with atomic number and takes the values 0.009, 0.440 and 1.3, respectively. The comparison of efficiencies of carbon and silicon shows increase of the efficiency of carbon in average compared to silicon. This may be related to the effect of energy gap on the efficiency, where the carbon gap is narrower than the silicon gap. Thus, it may be concluded that, changing the host and keeping the same doping materials is unlikely to change the general features of the efficiency of a solarcell. This research recommends to repeat the study made here by changing the doping materials by other materials having similar outer most electronic configurations as the doping materials used here while keeping silicon and carbon as host materials. In this way it can be seen whether the general features of the efficiency found here are universal or a special case.

روابط وملفات

التعريف والنوع

رقم الوثيقة

08c3992c-90ed-4717-90da-194cda4eba05

رقم العقد

0

نوع الوسائط

Crawler

نوع المحتوى

الرسائل العلمية

صيغة المصدر

رسائل دكتوراة

نوع الملف

pdf image

أسماء الملفات

08c3992c-90ed-4717-90da-194cda4eba05_1.pdf

بيانات النشر

ترجمة العنوان

أداء دايود أشباه الموصلات المحضرة من تشويب السيليكون والكربون بالماغنيزيوم والألومنيوم والكبريت والنحاس والزنك والكادميوم

ألقاب المؤلفين

[{"name_ar":"Mohammed Saeed Daw Elbei","title_ar":"اشراف","title_en":"Supervision"},{"name_ar":"قسم الله حسن حسب الله علي","title_ar":"اعداد","title_en":"Preparation"},{"name_ar":"مبارك ضرار عبدالله","title_ar":"اشراف","title_en":"Supervision"}]

اللغة

English

المصدر والدورية

اسم المصدر

Performance of Semiconductor Diodes Fabricated from Silicon and Carbon doped with Magnesium, Aluminium, Sulphur, Copper, Zinc and Cadmium

المحتوى والصفحات

عدد الصفحات

0

إشراف وإعداد

الإشراف

Mohammed Saeed Daw Elbei, مبارك ضرار عبدالله

الإعداد

قسم الله حسن حسب الله علي

الاقتباسات الببليوغرافية