Contribution to the modeling and optimization of new optoelectronic devices

الموضوعات

علوم تطبيقية وتكنولوجية

الملخص

Optoelectronic devices are of vital technological importance because of theirapplication in various fields including optical communication, environment monitoring andclean renewable energy sources. Integrated optoelectronic devices provide newopportunities toward dealing with the steady requirement of large bandwidth of nextgenerationoptical interconnections technology. In spite of this tremendous success, thereare many challenges associated with photoreceiver devices such as huge overhead in powerconsumption and relatively low sensitivity.On the other hand, the advanced thin-film photovoltaic based on kesterite technologyhas been enabling great promise in meeting demands of carbon-neutral energy. However,the developed CZTS solar cell structures are still challenging and their efficiency remainsfar from that offered by the Silicon-based technology.The work presented in this dissertation includes the development of new optoelectronicdevices and their applications in advanced optical interconnects and photovoltaic. Thediscrepancy between the advanced nanoelectronic and photonic devices is investigated,with a focus on the photoreceiver that determines the power budget of optical interconnects.The goal of this thesis is also to explore the possibility to overcome the most criticalproblems of the CZTS solar cell with the aim of achieving superior conversion efficiencies.Based upon these topics, the thesis is divided into the following partsFirst, the state-of-the-art of the optoelectronic devices including photodetectors,phototransistors and kesterite solar cell will be presented. Afterwards, the basicphotodetection mechanism and key device figure of merits are described. Finally, the recentprogress in the CZTS solar cell and their advanced elaboration techniques are reviewed indetail. Next, metaheuristic techniques and their potential for treating many engineeringproblems are presented. An overview of various metaheuristic algorithms such as geneticalgorithm (GA), particle swarm optimization (PSO) techniques and their derivatives arediscussed in details, indicating its potential application for optimizing novel optoelectronicdevices.Thereafter, two novel UV photodetector designs are proposed and analyticallyinvestigated in order to achieve the dual-benefit of high-performance photoreceivers andreduced power consumption. The first one relies on combining front glass texturization toenhance the device performance. While the second design aims at developing self-poweredphotodetectors by using dual material aspect. The proposed designs are optimized usingPSO-based approach, where improved device FoMs are achieved.Afterwards, new CMOS compatible phototransistor designs are introduced in thesecond part of this thesis. We focus on improving the device sensitivity and reduce itsfabrication cost by proposing a new design based on the junctionless aspect. The proposedstructure is then optimized using GA technique, where it offers an outstanding capability achieve high-performance phototransistor. We also propose in this chapter a new opticallycontrolled tunneling field effect transistor (OC-TFET) based on SiGe/Si/Ge Hetero-channelin order to enhance the optical commutation speed and reduce power consumption. Theinvestigated phototransistor designs share the ultra-sensitivity and weak signal detectioncharacteristics, which enables reducing the power from the emitter stage and therebydecreasing the power budget.This thesis defines also a path to enable improved efficiency values of kesterite solarcell by appropriately engineering the absorber layer. Firstly, a graded band-gap aspect isintroduced to avoid the recombination losses and enhance the carrier separation. Secondly,intermediate metallic sub-layers are introduced in the CZTS region to simultaneouslyachieving reduced optical losses and lower series resistance. PSO-based approach isconducted with the aim of maximizing the power efficiency. The physical reasons thatgovern the efficiency enhancement are also discussed.Finally, the role of introducing an intermediate Indium Tin Oxide (ITO) thin-film inimproving the Au/Si Schottky Barrier Diode (SBD) electrical and thermal stabilityperformances is experimentally analyzed. The Au/ITO/Si/Au structures with different ITOthicknesses were fabricated using RF magnetron sputtering technique. The current-voltage(I-V) characteristics of the elaborated structures are studied. Moreover, the effect of theannealing process on the device performance is investigated. Our study shows that theannealed SBD allows avoiding the degradation related-heating effects

روابط وملفات

التعريف والنوع

رقم الوثيقة

0473a09f-a0a2-4c6c-8d04-153e513ef6ef

رقم العقد

0

نوع الوسائط

Crawler

نوع المحتوى

الرسائل العلمية

صيغة المصدر

رسائل دكتوراة

نوع الملف

pdf text

أسماء الملفات

2105496_1.pdf

بيانات النشر

ألقاب المؤلفين

[{"name_ar":"Fayçal Djeffal ","title_ar":"اشراف","title_en":"Supervision"},{"name_ar":"Hichem Ferhati","title_ar":"اعداد","title_en":"Preparation"}]

اللغة

English

المصدر والدورية

اسم المصدر

Contribution to the modeling and optimization of new optoelectronic devices

المحتوى والصفحات

عدد الصفحات

0

إشراف وإعداد

الإشراف

Fayçal Djeffal

الإعداد

Hichem Ferhati

الاقتباسات الببليوغرافية