Method for Deriving the Complex Infrared Dielectric Function of Amorphous Thin Films from Infrared Reflectivity Spectroscopy

الموضوعات

علوم بحتة وطبيعية

الملخص

Although advanced nonlinear optical techniques have demonstrated high potentialfor examining elementary excitations in semiconductors, infrared reflectivityanalysis remains the most quantitative technique because simple theories canbe used to describe the material response to an infrared wavelength excitation.Line shape analysis, comparatively rare for non-linear optical spectroscopy, canbe carried out to yield quantitative results.Therefore, our objective in the present thesis is to develop an experimentalapproach based on infrared spectroscopy for the characterization of the complexinfrared dielectric function of amorphous thin films grown on a substrate, whichis inaccessible by other means. The proposed approach is based on the analysis ofthe infrared reflectivity spectrum of the considered film/substrate using a numericaltechnique combining the Fresnel theory and the Kramers-Kronig conversiontheorem.We used the technique developed to deduce the complex infrared dielectricfunction of amorphous silicon carbide thin films deposited on silicon at differenttemperatures and pressure levels using the pulsed laser deposition (PLD) growthtechnique. The results obtained showed that the growth temperature does nothave a significant effect on the dielectric properties of the amorphous films. However,the variation in pressure allows a substantial modification of the real andimaginary parts of the infrared complex dielectric function of the amorphoussilicon carbide film.We believe that the optical technique developed in this work constitutes anon-destructive method for the characterization of relevant infrared properties ofamorphous materials, which so far are not clear to materials scientists.

روابط وملفات

التعريف والنوع

رقم الوثيقة

0054afab-619e-4b6b-a462-8d84d18f9d96

رقم العقد

0

نوع الوسائط

Crawler

نوع المحتوى

الرسائل العلمية

صيغة المصدر

رسائل ماجيستير

نوع الملف

pdf text

أسماء الملفات

2026075_1.pdf

بيانات النشر

ألقاب المؤلفين

[{"name_ar":"Marwa Youssef Dakik","title_ar":"اعداد","title_en":"Preparation"},{"name_ar":"Michel Kazan","title_ar":"اشراف","title_en":"Supervision"}]

اللغة

English

المصدر والدورية

اسم المصدر

Method for Deriving the Complex Infrared Dielectric Function of Amorphous Thin Films from Infrared Reflectivity Spectroscopy

المحتوى والصفحات

عدد الصفحات

0

كلمات الباحثين

Show simple item record dc.contributor.advisor Kazan, Michel dc.contributor.author Dakik, Marwa dc.date.accessioned 2020-09-23T18:02:08Z dc.date.available 2020-09-23T18:02:08Z dc.date.issued 2020-09-23 dc.identifier.uri http://hdl.handle.net/10938/22116 dc.description Prof. Malek TabbalDr. Sara Najem dc.description.abstract Although advanced nonlinear optical techniques have demonstrated high potentialfor examining elementary excitations in semiconductors, infrared reflectivityanalysis remains the most quantitative technique because simple theories canbe used to describe the material response to an infrared wavelength excitation.Line shape analysis, comparatively rare for non-linear optical spectroscopy, canbe carried out to yield quantitative results.Therefore, our objective in the present thesis is to develop an experimentalapproach based on infrared spectroscopy for the characterization of the complexinfrared dielectric function of amorphous thin films grown on a substrate, whichis inaccessible by other means. The proposed approach is based on the analysis ofthe infrared reflectivity spectrum of the considered film/substrate using a numericaltechnique combining the Fresnel theory and the Kramers-Kronig conversiontheorem.We used the technique developed to deduce the complex infrared dielectricfunction of amorphous silicon carbide thin films deposited on silicon at differenttemperatures and pressure levels using the pulsed laser deposition (PLD) growthtechnique. The results obtained showed that the growth temperature does nothave a significant effect on the dielectric properties of the amorphous films. However,the variation in pressure allows a substantial modification of the real andimaginary parts of the infrared complex dielectric function of the amorphoussilicon carbide film.We believe that the optical technique developed in this work constitutes anon-destructive method for the characterization of relevant infrared properties ofamorphous materials, which so far are not clear to materials scientists. dc.language.iso en

إشراف وإعداد

الإشراف

Michel Kazan

الإعداد

Marwa Youssef Dakik

الاقتباسات الببليوغرافية